Main research areas include advanced transistor devices for integrated circuit applications, ferroelectric materials and device physics. In recent years, participated in over ten research projects including National Key R&D Programme. Principal investigator of 12 projects including Key Project (Joint Fund) of NSFC, General Projects (2 items), NSAF Fund, and Young Scientists Fund. Published over 90 papers as first or corresponding author, including in Science, Science Advances (2 papers), Nature Communications (10 papers), IEEE Electron Device Letters (4 papers), IEEE Transactions on Electron Devices (8 papers), Advanced Materials (5 papers), ACS Nano/Nano Letters (4 papers), and Advanced Functional Materials (7 papers). Filed 28 national invention patents in transistor structure design, testing/modelling, and fabrication processes; granted 20 invention patents and 3 software copyrights. Received Second Prize of Shanghai Natural Science Award (3/5), selected for Shanghai Youth Top-Notch Talent Programme, and awarded Gold Prize (as advisor) at China International College Students’ “Internet+” Innovation and Entrepreneurship Competition National Finals.

Main Research Areas:

(1) Advanced transistor devices for integrated circuit applications

(2) Ferroelectric materials and device physics

Admissions – Doctoral Students (Academic track: Electronic Science and Technology (Microelectronics and Solid-State Electronics); Professional track: Electronic Information): Direct entry from bachelor’s, combined Master’s-PhD, four-year PhD.

Admissions – Master’s Students (Academic track: Electronic Science and Technology (Microelectronics and Solid-State Electronics); Professional track: Electronic Information): Three-year programme.

Interested candidates please contact: liwenwu@fudan.edu.cn

Placement of Graduates: Universities (6), Huawei (2), SMIC (1), Shanghai IC R&D Centre (1), AMD (2), SanDisk (2), ARM (1), ChangXin Memory Technologies (1).

Postdoctoral researchers, assistant professors, and associate professors (tenure-track) are particularly welcome to join the group.

Microelectronic Engineering, Editor

Materials Science and Engineering B, Editor

Materials Today Electronics, Advisory Editorial Board Member

Scientific Reports (Nature Publishing Group), Editorial Board Member

16th–17th IEEE International Conference on Solid-State and Integrated Circuit Technology, Technical Program Committee Member

18th International Thin-Film Transistor Conference, Technical Program Committee Member

16th China Display Academic Conference, Program Committee Member

12th Shanghai Youth Federation Committee Member

Fudan University Zhuoshi Outstanding Talent Programme, 2025

Top Ten Advances in Chip Science in China (Nomination Award), 2024

Shanghai Youth Top-Notch Talent Programme, 2022

China International College Students’ “Internet+” Innovation and Entrepreneurship Competition National Finals Gold Prize (Advisor), 2021

Second Prize of Shanghai Natural Science Award (3/5), 2015

Shanghai Outstanding Doctoral Dissertation Award, 2014

Apr. 2025–present: Research Fellow, Doctoral Supervisor, College of Future Information Technology, Fudan University

Aug. 2021–Mar. 2025: Research Fellow, Doctoral Supervisor, Department of Materials Science, Fudan University

Oct. 2014–Jul. 2021: Research Fellow, Doctoral Supervisor, East China Normal University

Jul. 2013–Sept. 2014: R&D Engineer, Guangxi Electric Power Research Institute, China Southern Power Grid

Jun. 2012–Jun. 2013: Postdoctoral Fellow, National Institute for Materials Science (NIMS), Japan

Sept. 2007–Jun. 2012: Combined Master’s-PhD programme, Microelectronics and Solid-State Electronics, East China Normal University. Supervisor: Academician CHU JunHao.

Representative papers as first or corresponding author:

1. Developing Fatigue-Resistant Ferroelectrics using Interlayer Sliding Switching, Science, 385, 57-62 (2024).

2. Self-powered Photo-pyroelectric Sensing in Antiferroelectric HZO Memory with Asymmetric van der Waals Electrodes, Nature Communications, (in press 2026).

3. Polarity-dependent Ferroelectric Modulations in Two-dimensional Hybrid Perovskite Heterojunction Transistors, Nature Communications, 16, 9382 (2025).

4. Tailoring Tin-based Perovskite Crystallization via Large Cations and Pseudo-Halide Anions for High Mobility and High Stable Transistors, Science Advances, 11, eadv4138 (2025).